IEEE Study says advanced nanolaser designs enable ultra-low power operation and compact integration for next-generation ...

A new wave of innovation is transforming the future of optical technologies, driven by rapid advancements in semiconductor ...

Researchers utilize the step-flow growth method to develop high-quality (Ga,Fe)Sb ferromagnetic semiconductor with a record-high Curie temperature for spintronics “In the conventional (Ga,Fe)Sb ...

Xanadu Quantum Technologies has launched a project with Mitsubishi Chemical to develop quantum algorithms for extreme ...

Scientists have long suspected that phosphorene nanoribbons (PNRs)—thin pieces of black phosphorus, only a few nanometers ...

Scientists at the University of Twente (UT), The Netherlands, have developed a new laser-based method to create highly-ordered semiconductor material at room temperature. The scientists say that this ...

Putting unusually large atoms in a box with cold copper sides helped researchers control them for an unprecedented 50 minutes at room-temperature, an improvement necessary for building more powerful q ...

The private university didn’t provide a copy of the final report. Inside Higher Ed was unable to reach Dias.. The Wall Street Journal reported that a university investigation found Dias manipulated ...

More information: Pham Nam Hai et al, Very high Curie temperature (470–530 K) in (Ga,Fe)Sb ferromagnetic semiconductor grown by step-flow mode on vicinal GaAs substrates, Applied Physics Letters ...

A (Ga,Fe)Sb ferromagnetic semiconductor with a Curie temperature (T C) up to 530 K was achieved using step-flow growth on vicinal GaAs substrates, surpassing previous T C records for such materials.