A 650-V bi-directional GaN IC combined with a high-speed isolated gate driver facilitates single-stage power conversion.

Thanks to a combination of high-speed and low-loss switching, GaN high electron mobility transistors are able to excel in ...

5N Plus Inc, a Canada-based producer of specialty semiconductors and materials, has entered into an agreement, through its ...

Hundreds of decommissioned manufacturing tools from Ubiquity Solar, including semiconductor and photovoltaic production lines ...

The ultimate power semiconductor switch (transistor) can block voltage and allow current flow in two directions, with the highest efficiency. Navitas’ leadership in GaN innovation has delivered this ...

Cambridge GaN Devices (CGD) has revealed more details about a solution that will enable the company to address EV powertrain ...

Speaking at the Singapore Semiconductor Industry Association's Women's Forum 2025, Gan noted that while the share of women in STEM jobs has risen from 29 percent in 2014 to 35 percent in 2024, "women ...

RFMW, part of Exponential Technology Group, Inc., a premier distributor of power management and RF and microwave components ...

ROHM Semiconductor U.S.A., LLC, will participate in Applied Power Electronics Conference (APEC) 2025, the premier power ...

Navitas Semiconductor has announced the world’s first production-released 650 V bi-directional GaNFast ICs and high-speed ...