KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has expanded its line-up of N-channel power MOSFETs fabricated with the latest-generation process [1], ...

Toshiba Electronics Europe GmbH has added the DTMOSVI 600V HSD (High-Speed Diode) N-channel power MOSFETs to the DTMOSVI 600V Series, featuring a super junction structure. The seven new products are ...

Although the development of power MOSFETs began with the V-MOS structure, the first commercially successful devices were based on the DMOS structure. In the DMOSFET structure, the MOS channel is ...

TOKYO--(BUSINESS WIRE)-- Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it has developed a new structure for a silicon carbide metal-oxide-semiconductor field-effect transistor ...

The drive for more power in tighter dimensions is being addressed by advancements in both silicon and packaging technologies. A new power MOSFET combines a new generation of silicon technology with a ...

Toshiba is expanding its DTMOSVI series lineup – for switched-mode power supplies for industrial equipment – with DTMOSVI 600V HSD (High-Speed Diode) N-channel power MOSFETs. Keep up with developments ...

iDEAL Semiconductor is now sampling the first products in its new series of silicon MOSFETs that leverage its SuperQ architecture to deliver efficiencies and performance that rival some compound ...

Toshiba Electronics Europe has expanded its DTMOSVI 600V portfolio with a new line of N‑channel power MOSFETs.

Over the years, low losses possible by high breakdown field made silicon carbide (SiC) MOSFETs extremely popular amongst engineers. At present, they are mostly used in areas where IGBTs (Insulated ...

IGBT, stands for Insulated Gate Bipolar Transistor. It is a bipolar transistor with an insulated gate terminal. It combines a control input with a MOS structure and a bipolar power transistor in a ...