NAND Flash is named after the NAND (NOT-AND) logic gate, which is used in its basic architecture. The term "NAND" is derived from the way the memory cells are organized in a series-connected structure ...

Samsung has signed an agreement with China’s YMTC to use its bonding technology in the production of 400-layer NAND flash ...

The controller architecture is shown in Figure 1. Figure 1: NAND Flash Controller Architecture The figure shows the controller with an AHB bus interface to the processor. Many other interfaces are ...

The new 176-layer NAND includes Micron‘s stacked replacement gate NAND architecture. According to Micron, the company’s replacement-gate architecture uses highly conductive metal for the ...

The 10th Gen V-NAND device that Samsung presented at ISSCC is a 3D TLC NAND device with over 400 active layers, a 1 Tb capacity per die, and a 5.6 GT/s interface speed. As the new ...

The company has a new memory architecture called high-bandwidth flash that fuses the massive storage capacity of 3D NAND with the kind of bandwidth offered by HBM. This hybrid creation stacks up a ...

Advantest’s new NAND ATE system, dubbed the T5831, is based on a tester-per-site architecture. The system provides site-chain support and concurrent test. It also supports bad block management ...

Bottom line: The NAND flash industry is facing mounting pressure due to a combination of weak demand, oversupply, and declining prices. This challenging market environment has persisted throughout ...

Samsung has introduced its upcoming 10th-generation V-NAND flash memory with over 400 active layers and a 5.6 GT/s interface speed at the International Solid-State Circuit Conference 2025.