Samsung has signed an agreement with China’s YMTC to use its bonding technology in the production of 400-layer NAND flash ...

NAND Flash is named after the NAND (NOT-AND) logic gate, which is used in its basic architecture. The term "NAND" is derived from the way the memory cells are organized in a series-connected structure ...

The company has a new memory architecture called high-bandwidth flash that fuses the massive storage capacity of 3D NAND with the kind of bandwidth offered by HBM. This hybrid creation stacks up a ...

The new 176-layer NAND includes Micron‘s stacked replacement gate NAND architecture. According to Micron, the company’s replacement-gate architecture uses highly conductive metal for the ...

The controller architecture is shown in Figure 1. Figure 1: NAND Flash Controller Architecture The figure shows the controller with an AHB bus interface to the processor. Many other interfaces are ...

Advantest’s new NAND ATE system, dubbed the T5831, is based on a tester-per-site architecture. The system provides site-chain support and concurrent test. It also supports bad block management ...

Samsung has introduced its upcoming 10th-generation V-NAND flash memory with over 400 active layers and a 5.6 GT/s interface speed at the International Solid-State Circuit Conference 2025.

The late 1990s saw the widespread introduction of solid-state storage based around NAND Flash. Ranging from memory cards for portable devices to storage for desktops and laptops, the data storage ...

Bottom line: The NAND flash industry is facing mounting pressure due to a combination of weak demand, oversupply, and declining prices. This challenging market environment has persisted throughout ...