The 2SA1648 is a PNP silicon epitaxial transistor featuring fast switching speed for high current control. It features low collector saturation voltage, as well as high DC current gain and excellent ...
GOLETA, Calif.--(BUSINESS WIRE)--Transphorm, Inc. (Nasdaq: TGAN)—a pioneer in and global supplier of high reliability, high performance gallium nitride (GaN) power conversion products—announced today ...
GaN Systems will demonstrate its 650-V, 150-A GaN power transistor at PCIM Europe, claiming the industry’s highest-current 650-V GaN power transistor. The GS-065-150 device delivers 100 times lower ...
Saelig Company, Inc. announces the availability of the CLIPPER CLP1500V15A1 - a new, high technology oscilloscope adapter that allows small voltages to be measured in the presence of very high ...
What are GaN HEMTs and why are they important? How GaN devices can handle kilowatt power conversion. Gallium-nitride (GaN) high electron mobility transistors (HEMTs) are a form of field-effect ...
High-voltage power devices and transistors form the backbone of modern energy conversion systems, serving critical roles in renewable energy, automotive powertrains and industrial drives. These ...
Mitsubishi Electric’s new 2.0kV LV100 semiconductor device is based on its insulated-gate bipolar transistor (IGBT) technology and Relaxed Field of Cathode (RFC) diodes. It is designed for industrial ...
This file type includes high resolution graphics and schematics when applicable. Early predictions of widespread dominance were somewhat premature, but over the next several years, wide-bandgap (WBG) ...
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